Memory with carbon-containing silicon channel

ABSTRACT

A memory includes a first memory cell and a second memory cell formed over the first memory cell. Each of the first memory cell and the second memory cell includes a channel region comprising silicon and carbon, a control gate, and a dielectric stack between the channel region and the control gate. A carbon content of the channel region of the second memory cell is less than a carbon content of the channel region of the first memory cell.

RELATED APPLICATIONS

This is a continuation of U.S. patent application Ser. No. 13/849,962titled “STACKED NON-VOLATILE MEMORY WITH SILICON CARBIDE-BASED AMORPHOUSSILICON THIN FILM TRANSISTORS,” filed Mar. 25, 2013 (pending), which isa divisional of U.S. patent application Ser. No. 13/186,822 titled“STACKED NON-VOLATILE MEMORY WITH SILICON CARBIDE-BASED AMORPHOUSSILICON THIN FILM TRANSISTORS,” filed Jul. 20, 2011, now U.S. Pat. No.8,404,536, which is a continuation of U.S. patent application Ser. No.12/235,970 titled “STACKED NON-VOLATILE MEMORY WITH SILICONCARBIDE-BASED AMORPHOUS SILICON THIN FILM TRANSISTORS,” filed Sep. 23,2008, now U.S. Pat. No. 7,994,566, which is a continuation of U.S.patent application Ser. No. 11/377,158 titled “STACKED NON-VOLATILEMEMORY WITH SILICON CARBIDE-BASED AMORPHOUS SILICON THIN FILMTRANSISTORS” filed Mar. 16, 2006, now U.S. Pat. No. 7,439,594, each ofwhich is commonly assigned and incorporated herein by reference.

TECHNICAL FIELD

The present invention relates generally to memory devices and inparticular the present invention relates to non-volatile memory devicearchitecture.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory including random-access memory (RAM),read only memory (ROM), dynamic random access memory (DRAM), synchronousdynamic random access memory (SDRAM), and flash memory.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Common uses for flash memory include personal computers, personaldigital assistants (PDAs), digital cameras, and cellular telephones.Program code and system data such as a basic input/output system (BIOS)are typically stored in flash memory devices for use in personalcomputer systems.

The performance of flash memory devices needs to increase as theperformance of computer systems increase. For example, a flash memorytransistor that can be erased faster with lower voltages and have longerretention times could increase system performance.

Amorphous silicon (a-Si)-based thin film transistors (TFT) have beenused to improve transistor performance. However, these transistors haveundesirable short channel effects and randomness in devicecharacteristics. This is largely due to the randomness in polysilicongrain size and grain boundaries that exist in TFT devices. For example,in sub-75 nm feature sizes, this can result in a very large variation indevice characteristics making the stacked cell approach extremelychallenging for mass manufacture.

Silicon carbide (SiC) substrates have been used in power devices due tothe higher bandgap over silicon. Wide bandgap material like SiCsubstrates have very low intrinsic carrier concentration and thermalgeneration scales directly with the intrinsic carrier concentration.Therefore, junction leakage currents in SiC substrate devices are verylow.

However, SiC substrates suffer numerous problems. For example, wafersizes in excess of four inches that have high quality and low cost aredifficult to achieve. Additionally, the defect densities areunacceptable and the substrates suffer from poor carrier mobility forhigh speed switching.

For the reasons stated above, and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art fora higher performance flash memory transistor that does not have seriousscaling issues.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross-sectional view of one embodiment of one or moresteps in a method for fabrication of a memory device of the presentinvention.

FIG. 2 shows a cross-sectional view of one embodiment of one or moresteps in the method for fabrication of the memory device of the presentinvention.

FIG. 3 shows a cross-sectional view of one embodiment of one or moresteps in the method for fabrication of the memory device of the presentinvention.

FIG. 4 shows a cross-sectional view of one embodiment of a threedimensional transistor of the present invention.

FIG. 5 shows a perspective view of a FinFET embodiment of the presentinvention.

FIG. 6 shows a cross-sectional view of the embodiment of FIG. 5.

FIG. 7 shows a block diagram of an electronic memory system of thepresent invention.

FIG. 8 shows a block diagram of one embodiment of a memory module of thepresent invention.

DETAILED DESCRIPTION

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration specific preferredembodiments in which the inventions may be practiced. These embodimentsare described in sufficient detail to enable those skilled in the art topractice the invention, and it is to be understood that otherembodiments may be utilized and that logical, mechanical and electricalchanges may be made without departing from the spirit and scope of thepresent invention. The terms wafer and substrate used previously and inthe following description include any base semiconductor structure. Bothare to be understood as including bulk silicon, silicon-on-sapphire(SOS) technology, silicon-on-insulator (SOI) technology,silicon-on-nothing, thin film transistor (TFT) technology, doped andundoped semiconductors, epitaxial layers of silicon supported by a basesemiconductor, as well as other semiconductor structures well known toone skilled in the art. Furthermore, when reference is made to a waferor substrate in the following description, previous process steps mayhave been utilized to form regions/junctions in the base semiconductorstructure. The following detailed description is, therefore, not to betaken in a limiting sense, and the scope of the present invention isdefined only by the claims and equivalents thereof.

FIG. 1 illustrates a cross-sectional view of one embodiment of one ormore steps for fabricating a memory device of the present invention. Asubstrate 100 undergoes standard CMOS processing for substrateisolation, well implants, and, if needed, threshold voltage adjustments.All periphery logic devices are preferably formed in starting siliconsubstrate—bulk or SOI.

In one embodiment, the substrate 100 is a p-type substrate with n-wellshaving p-type regions. Alternate embodiments may use other conductivitytypes.

The periphery regions are covered and hard mask and lithography stepsused to open up the memory array. An insulation layer 102 is formed overthe substrate/well 100. In one embodiment, this is an oxide layer 102.Alternate embodiments may use other insulating materials for theinsulation layer 102.

A silicon carbide (SiC) and/or carbon rich amorphous silicon (a-Si)layer 103 is formed over the insulation layer 102. This film 103 formsthe channel region of the memory transistors of the present invention.The carbon concentration in the film 103 is tuned by controlling theSi:C growth temperature. In an alternate embodiment, the SiC thin filmis formed by direct deposition to form the channel region. In yetanother embodiment, the Si:C is formed after the a-Si deposition.

In still another alternate embodiment, the Si:C is formed onsilicon-germanium (a-SiGe) after deposition. In one version of thisembodiment, the mole fraction of SiGe is tuned along with the Si:Ccontent to optimize carrier mobility.

In yet another embodiment, the Si:C thin film is formed on hydrogenateda-Si (a-Si:H). Another embodiment forms the Si:C thin film on deuterateda-Si (a-Si:D) and/or fluorinated a-Si (a-Si:F).

In one embodiment, an optional thin a-Si cap layer (not shown) isdeposited on the SiC layer 103. The a-Si cap layer can act as a seed forgate oxidation. In another embodiment, this layer may be an oxide layerformed by an atomic layer deposition (ALD) process.

FIG. 2 illustrates additional fabrication steps of the presentinvention. This figure shows that the oxide-nitride-oxide (ONO)dielectric stack 200 for each transistor is formed over the SiC channelregion layer 103. The ONO dielectric stack 200 is formed forconventional SONOS memory cells. The nitride layer of the ONO dielectric200 is the charge storage layer or floating gate.

Alternate embodiments may use other dielectric stacks depending on thedesired cell characteristics. For example, Al₂O₃, HfO₂LaO₃, LaAlO₃, andother suitable high dielectric constant (high-k) materials can besubstituted for the nitride film. In another embodiment, the dielectricstack may have a graded stoichiometry, forming a “crested barrier”structure.

A control gate 205 is formed over the ONO stack 200. The gate 205 can bepolysilicon, metal, or some other suitable gate material. In oneembodiment, the gate 205 is a p+ poly. Alternate embodiments may use n+poly. A metal gate 205 can include metals such as TiN, TaN or some othersuitable metal.

The spacers 201, 202 are formed adjacent the transistor stack 200, 205.In one embodiment, the spacers 201, 202 are an oxide. Alternateembodiments can use other materials.

Source and drain regions 210, 211 are formed in the channel region layer103. In one embodiment, these are n+ doped regions in the SiC layer 103.An alternate embodiment can use p+ regions. The source/drain regions210, 211 can be formed by conventional implants, solid-source diffusion,plasma doping schemes, or some other suitable method. In anotherembodiment, the source/drain regions 210, 211 are formed utilizinggate-induced tunneling through Schottky barriers. In such devices,carrier injection is controlled by the modulation of the Schottkybarrier width within a fully depleted source extension region.

In an alternate embodiment, the source/drain region implants areeliminated by forming source/drain contacts to the Si:C thin film usingmetals and/or silicides with suitable work function to form low Schottkybarrier contacts.

The function of each source/drain region 210, 211 is determined by thebiasing of the transistor. For example, a first region 210 may act likea drain region 210 when it is biased with a positive voltage and theremaining region 211 is a source region when it is at ground potentialor left floating. An alternate embodiment can bias these regions 210,211 such that the functions reverse. During transistor operation, achannel forms in the channel region layer 103 between the source/drainregions 210, 211.

Metal deposition and pattern steps can be used to form Schottky contactsfor the source/drain regions 210, 211. The contacts could be used togain access to these regions 210, 211, for example, if they were formedon the top layer of a multiple transistor stack and required contact tointerface with external connections and/or other circuits of theintegrated circuit.

FIG. 3 illustrates another set of steps in fabricating the stackednon-volatile memory cells of the present invention. An oxide or otherspacer material 300 is formed over the just completed transistor fromFIG. 2. An oxide or other insulating layer 316 is then formed over thisand the above described process is repeated for as many transistorstacks as desired.

The illustrated embodiment includes forming the second transistor 301over the transistor of FIG. 2. The second transistor stack is comprisedof the SiC or carbon rich silicon layer 315 over the oxide layer 316.The source/drain regions 320, 321 formed in the SiC channel region layer315. The transistor stack 303 comprising the ONO layer 310 and thecontrol gate 311 is formed over the channel region layer 315 and thespacer material 312, 313 is formed on either side of the transistorstack 303.

In one embodiment, the carbon concentration is decreased in eachsubsequently formed transistor layer. In other words, the lowesttransistor layer 330 will experience the greatest thermal budget.Therefore, the lowest layer 330 will have the greatest carbon content.The next layer of transistors 301 will experience somewhat less thermalprocessing and, thus, has less carbon concentration than the lowerlayer. The decrease in carbon content continues for each subsequentlyformed transistor layer. The carbon content can be tailored by changingthe interstitial carbon concentration during Si:C growth. Such anembodiment provides a first channel layer with superior short channeleffects at the cost of a slight mobility reduction.

One embodiment of the above described stacked memory transistors uses4H—SiC in the SiC layer 103. 4H SiC has a band gap energy of 3.26 eV,thermal conductivity of 3.0-3.8 W/cm K at 300K and a breakdown electricfield of 2.2×10⁶ V/cm. Another embodiment uses 6H—SiC that has a bandgap energy of 3.03 eV, thermal conductivity of 3.0-3.8 W/cm K at 300Kand a breakdown electric field of 2.4×10⁶ V/cm. These properties make itclear that SiC is an excellent material compared to silicon due to itsvery low leakage, high temperature operating characteristics, sustaininghigh electric fields, and excellent heat dissipation.

FIG. 4 illustrates a cross-sectional view of one embodiment of a threedimensional transistor in accordance with the thin film channel regionlayer of the present invention. The transistor is fabricated on a-Si 400layer on the substrate. The channel region 420 between the source/drainregions 403, 404 is a U-shaped region 420 that is formed in a thin layerof carbon rich silicon (Si:C). In an alternate embodiment, SiC may beused for the channel region layer 401.

The ONO dielectric stack 410 fills the U-shaped area. A poly or metalgate 411 is formed over the ONO dielectric. As in previous embodiments,the nitride layer of the ONO stack 410 acts as the floating gate orcharge storage layer.

The fabrication of the embodiment of FIG. 4 can be repeated multipletimes to form a transistor stack of such non-planar transistors. Thisprocess has been discussed previously. The various alternate embodimentsin fabrication and materials discussed previously can also be employedin these non-planar transistors.

FIG. 5 illustrates another non-planar embodiment of the presentinvention. This embodiment is a FinFET memory cell that employs theSiC/Si:C thin film channel region layer of the present invention.

The FinFET embodiment is comprised of a substrate 500 that, in oneembodiment, is comprised of silicon. Two source/drain regions 501, 502are formed in a three dimensional manner over the substrate 500. Asilicon “fin” 503 is formed between the source/drain regions 501, 502. Agate 504 is formed over the silicon “fin” 503. The gate can be a poly ormetal gate. The gate is shown in dotted lines for purposes of clarity.

The “fin” 503 contains the Si:C/SiC channel region of the presentinvention. The structure of the “fin” 503 is shown in FIG. 6 anddescribed subsequently. The percentage of carbon added to the amorphoussilicon decreases for each subsequently formed layer of verticallystacked FinFET memory cells.

The FinFET of FIG. 5 is a double or triple gate transistor. Thetransistor is a double gate if the gate oxide (601 of FIG. 6) betweenthe gate 504 and the “fin” is greater on the sidewalls of the “fin” thanthe top. The transistor is a triple gate structure if the gate oxide isthe same thickness on all three surfaces.

FIG. 6 shows a cross-sectional view, along axis A-A′, of the FinFETembodiment of FIG. 5. This view shows the substrate 500 over which thechannel region 610, the ONO layer 611, and the Si:C or SiC thin filmlayer 503 is formed as shown in the three dimensional view of FIG. 5.

This view additionally shows the gate oxide layer 601 that is formedover the “fin”. While FIG. 6 shows this layer 601 to be of equalthickness over each surface, as would be the case in a triple gatestructure, alternate embodiments can vary the thickness as previouslydescribed. For example, for a double gate device, the top surface of the“fin” would not be as thick as the sidewalls.

The gate 504 is formed over the gate oxide layer 601. The gate 504 canbe comprised of polysilicon, metal, or some other suitable gatematerial.

The fabrication of the embodiment of FIGS. 5 and 6 can be repeatedmultiple times to form a three dimensional transistor stack, asillustrated in the embodiment of FIG. 3, of such non-planar transistors.This process has been discussed previously. The various alternateembodiments in fabrication and materials discussed previously can alsobe employed in these non-planar transistors.

FIG. 7 illustrates a functional block diagram of a memory device 700that can incorporate the stacked non-volatile memory cells of thepresent invention. The memory device 700 is coupled to a processor 710.The processor 710 may be a microprocessor or some other type ofcontrolling circuitry. The memory device 700 and the processor 710 formpart of an electronic memory system 720. The memory device 700 has beensimplified to focus on features of the memory that are helpful inunderstanding the present invention.

The memory device includes an array of non-volatile memory cells 730that can be floating gate flash memory cells. The memory array 730 isarranged in banks of rows and columns. The control gates of each row ofmemory cells are coupled with a word line while the drain regions of thememory cells are coupled to bit lines. The source regions of the memorycells are coupled to source lines. As is well known in the art, theconnection of the cells to the bit lines and source lines depends onwhether the array is a NAND architecture, a NOR architecture, an ANDarchitecture or some other memory array architecture. The stackednon-volatile memory cells of the present invention can operate in anymemory array architecture.

An address buffer circuit 740 is provided to latch address signalsprovided on address input connections A0-Ax 742. Address signals arereceived and decoded by a row decoder 744 and a column decoder 746 toaccess the memory array 730. It will be appreciated by those skilled inthe art, with the benefit of the present description, that the number ofaddress input connections depends on the density and architecture of thememory array 730. That is, the number of addresses increases with bothincreased memory cell counts and increased bank and block counts.

The memory integrated circuit 700 reads data in the memory array 730 bysensing voltage or current changes in the memory array columns usingsense/buffer circuitry 750. The sense/buffer circuitry, in oneembodiment, is coupled to read and latch a row of data from the memoryarray 730. Data input and output buffer circuitry 760 is included forbi-directional data communication over a plurality of data connections762 with the controller 710. Write circuitry 755 is provided to writedata to the memory array.

Control circuitry 770 decodes signals provided on control connections772 from the processor 710. These signals are used to control theoperations on the memory array 730, including data read, data write, anderase operations. The control circuitry 770 may be a state machine, asequencer, or some other type of controller.

The non-volatile memory device illustrated in FIG. 7 has been simplifiedto facilitate a basic understanding of the features of the memory. Amore detailed understanding of internal circuitry and functions of flashmemories are known to those skilled in the art.

FIG. 8 is an illustration of an exemplary memory module 800. Memorymodule 800 is illustrated as a memory card, although the conceptsdiscussed with reference to memory module 800 are applicable to othertypes of removable or portable memory, e.g., USB flash drives, and areintended to be within the scope of “memory module” as used herein. Inaddition, although one example form factor is depicted in FIG. 8, theseconcepts are applicable to other form factors as well.

In some embodiments, memory module 800 will include a housing 805 (asdepicted) to enclose one or more memory devices 810, though such ahousing is not essential to all devices or device applications. At leastone memory device 810 is a non-volatile memory [including or adapted toperform elements of the invention]. Where present, the housing 805includes one or more contacts 815 for communication with a host device.Examples of host devices include digital cameras, digital recording andplayback devices, PDAs, personal computers, memory card readers,interface hubs and the like. For some embodiments, the contacts 815 arein the form of a standardized interface. For example, with a USB flashdrive, the contacts 815 might be in the form of a USB Type-A maleconnector. For some embodiments, the contacts 815 are in the form of asemi-proprietary interface, such as might be found on COMPACTFLASHmemory cards licensed by SANDISK Corporation, MEMORYSTICK memory cardslicensed by SONY Corporation, SD SECURE DIGITAL memory cards licensed byTOSHIBA Corporation and the like. In general, however, contacts 815provide an interface for passing control, address and/or data signalsbetween the memory module 800 and a host having compatible receptors forthe contacts 815.

The memory module 800 may optionally include additional circuitry 820which may be one or more integrated circuits and/or discrete components.For some embodiments, the additional circuitry 820 may include a memorycontroller for controlling access across multiple memory devices 810and/or for providing a translation layer between an external host and amemory device 810. For example, there may not be a one-to-onecorrespondence between the number of contacts 815 and a number of I/Oconnections to the one or more memory devices 810. Thus, a memorycontroller could selectively couple an I/O connection (not shown in FIG.8) of a memory device 810 to receive the appropriate signal at theappropriate I/O connection at the appropriate time or to provide theappropriate signal at the appropriate contact 815 at the appropriatetime. Similarly, the communication protocol between a host and thememory module 800 may be different than what is required for access of amemory device 810. A memory controller could then translate the commandsequences received from a host into the appropriate command sequences toachieve the desired access to the memory device 810. Such translationmay further include changes in signal voltage levels in addition tocommand sequences.

The additional circuitry 820 may further include functionality unrelatedto control of a memory device 810 such as logic functions as might beperformed by an ASIC (application specific integrated circuit). Also,the additional circuitry 820 may include circuitry to restrict read orwrite access to the memory module 800, such as password protection,biometrics or the like. The additional circuitry 820 may includecircuitry to indicate a status of the memory module 800. For example,the additional circuitry 820 may include functionality to determinewhether power is being supplied to the memory module 800 and whether thememory module 800 is currently being accessed, and to display anindication of its status, such as a solid light while powered and aflashing light while being accessed. The additional circuitry 820 mayfurther include passive devices, such as decoupling capacitors to helpregulate power requirements within the memory module 800.

CONCLUSION

In summary, the non-volatile memory transistors of the present inventionare fabricated on a silicon carbide or carbon rich silicon channel thinfilm. This provides reduced tunnel barrier and ease of erase with lowervoltages and electric fields. The cells of the present invention arestackable in order to greatly increase the density of a memory device.

The non-volatile memory cells of the present invention may be NAND-typecells, NOR-type cells, or any other type of non-volatile memory arrayarchitecture.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is intended that this invention belimited only by the following claims and equivalents thereof.

What is claimed is:
 1. A memory, comprising: a first memory cell; and asecond memory cell formed over the first memory cell; wherein each ofthe first memory cell and the second memory cell comprises: a channelregion comprising silicon and carbon; a control gate; and a dielectricstack between the channel region and the control gate; wherein a carbonconcentration of the channel region of the second memory cell is lessthan a carbon concentration of the channel region of the first memorycell.
 2. The memory of claim 1, further comprising: a third memory cellformed over the second memory cell; wherein the third memory cellcomprises: a channel region comprising silicon and carbon; a controlgate; and a dielectric stack between the channel region and the controlgate; wherein a carbon concentration of the channel region of the thirdmemory cell is less than the carbon concentration of the channel regionof the second memory cell.
 3. The memory of claim 1, wherein each of thechannel regions comprises silicon carbide.
 4. The memory of claim 3,wherein the silicon carbide is formed on amorphous silicon.
 5. Thememory of claim 4, wherein the amorphous silicon is selected from thegroup consisting of hydrogenated amorphous silicon, deuterated amorphoussilicon and fluorinated amorphous silicon.
 6. The memory of claim 1,wherein each of the channel regions comprises carbon-rich amorphoussilicon.
 7. The memory of claim 1, wherein each of the dielectric stackscomprises a charge storage dielectric.
 8. The memory of claim 7, whereinthe charge storage dielectric comprises silicon nitride.
 9. The memoryof claim 7, wherein the charge storage dielectric comprises a high-kdielectric.
 10. The memory of claim 9, wherein the high-k dielectric isselected from the group consisting of Al₂O₃, HfO₂, LaO₃ and LaAlO₃. 11.The memory of claim 1, wherein each of the first memory cell and thesecond memory cell further comprises source/drain regions.
 12. Thememory of claim 11, wherein the source/drain regions for each of thefirst memory cell and the second memory cell are formed on opposing endsof their respective channel region.
 13. The memory of claim 11, whereinthe source/drain regions for each of the first memory cell and thesecond memory cell are formed in their respective channel regionadjacent opposing sides of their respective control gate.
 14. A memory,comprising: a plurality of memory cells formed in a stack; wherein eachmemory cell of the stack of memory cells comprises: a channel regioncomprising carbon-rich amorphous silicon; a control gate; and adielectric stack between the channel region and the control gate,wherein the dielectric stack comprises a charge storage dielectric;wherein the channel region of each memory cell of the stack of memorycells has an associated predetermined concentration of carbon; whereinthe stack of memory cells comprises a particular memory cell and another memory cell; wherein the other memory cell is formed over theparticular memory cell in the stack of memory cells; and wherein thepredetermined carbon concentration of the channel region of the othermemory cell is less than the predetermined carbon concentration of thechannel region of the particular memory cell.
 15. The memory of claim14, wherein the predetermined carbon concentration of the channel regionof any memory cell of the stack of memory cells is less than thepredetermined carbon concentration of the channel region of each othermemory cell of the stack of memory cells formed underneath it in thestack of memory cells.
 16. The memory of claim 14, wherein each memorycell of the stack of memory cells further comprises source/drain regionsformed on opposing ends of their respective channel region.
 17. Amemory, comprising: a plurality of memory cells formed in a stack;wherein each memory cell of the stack of memory cells comprises: achannel region comprising carbon-rich amorphous silicon; a control gate;and a dielectric stack between the channel region and the control gate,wherein the dielectric stack comprises a charge storage dielectric;wherein the channel region of each memory cell of the stack of memorycells has an associated interstitial carbon concentration; wherein thestack of memory cells comprises a particular memory cell and an othermemory cell; wherein the other memory cell is formed over the particularmemory cell in the stack of memory cells; and wherein the interstitialcarbon concentration of the channel region of the other memory cell isless than the interstitial carbon concentration of the channel region ofthe particular memory cell.
 18. The memory of claim 17, wherein theinterstitial carbon concentration of the channel region of any memorycell of the stack of memory cells is less than the interstitial carbonconcentration of the channel region of each other memory cell of thestack of memory cells formed underneath it in the stack of memory cells.19. The memory of claim 17, wherein the silicon carbide comprises asilicon carbide selected from the group consisting of 4H—SiC and 6H—SiC.20. The memory of claim 17, wherein each memory cell of the stack ofmemory cells further comprises source/drain regions formed in theirrespective channel region adjacent opposing sides of their respectivecontrol gate.